b'TALENT PIPELINE: A model for thermal interfacial resistance modeling for phonons, using a multigroup, Aria Hossein, student and postdoc deterministic, implicitly coupled (in temperature) phonon transport method was at University of California, Riverside developed. The Griffin radiation transport code was used to solve the Boltzmann Cameron Chevalier, postdoc at University transport equation for the spatially and spectrally resolved phonon and electron of California, Riverside population distributions that were used to compute the resulting net transport Carson Minor, student at University of Utah behavior. The transport groups for each material were discretized for use as the Gitanjali Mishra, student at University of Utah code input. This method was tested on silicon, aluminum nitride, gallium nitride, Janelle Donegan, student at University of Utah and GaSb. The method correctly predicted thermal conductivity in spatial domains Kevin Vallejo, Russell L. Heath distinguishedranging from 0.005-20 m and predicted thermal conductivity in bulk materials. postdoctoral researcher at INL, converted to staff This method is unique from other phonon transport codes because it allows for Madison Nordstrom, student multiscale spatial transport in materials with complex geometry. Starting from at Boise State University the atomic scale with density functional theory calculations of perfect crystals, our Narayan Poudel, postdoc at INL, converted to staff modeling approach can predict the effective conductivity of materials with nano and microscale geometry by explicitly modeling the effect that mesoscale defects and scattering from surfaces and internal interfacial have on phonon transport. PUBLICATIONS:C. A. Dennett, N. Poudel, A. Tiwari, P. J. Simmonds, D. H. Hurley, and K. Gofryk, Towards actinide heterostructure synthesis and science, Nature Comm, 13, (2022). K. D. Vallejo, F. Kabir, N. Poudel, C. A. Marianetti, D. H. Hurley, P. J. Simmonds, C. A. Dennett and K. Gofryk, Advances in actinide thin films: synthesis, properties, and future directions, Rep. Prog. Phys. 85, 123101, (2022). M. D. Nordstrom, T. A. Garrett, P. Reddy, J. McElearney, J. R. Rushing, K. D. Vallejo, K. Mukherjee, K. A. Grossklaus, T. E. Vandervelde, P. J. Simmonds, Direct integration of GaSb with GaAs(111)A using interfacial misfit arrays, Crystal Growth and Design, 2023.Electrical resistivity as a functionG. Mishra, A. Tiwari, Growth and Characterization of Thin Films of Zinc Oxide of applied magnetic field forand Related Materials for Application in Micatronics, APS March Meeting InAs and GaSb quantum wellsAbstracts, (2022).grown on GaSb(100) substrates at differenttemperatures.31'